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The group of MOVPE epitaxy and investigations of the properties of nano-heterostructures based on group III nitrides
The group possesses the modern technological equipment for epitaxial growth of the nanoheterostructures based on the group III nitrides by the metalorganic vapour-phase epitaxy (MOVPE) method.
The constructive similarity of the three MOVPE systems listed above allows sufficiently easy to transfer the developed technological regimes between them.
The investigations of the structural, optical and electrical properties of the epitaxial structures based on the III-N compounds are carried out using a wide variety of experimental techniques.
The group possesses a few measurements workstations for experimental investigations of the physical properties of the nanoheterostructures based on III-N semiconductors:
Besides the equipment possessed by the group, the investigations of the physical properties of the heterostructures are carried out using equipment both from the Center for collective usage of scientific equipment “Materials science and diagnostics in advanced technologies” of Ioffe Institute, the Academic University, SPbAU RAS (Science and education center of nanotechnologies of RAS), the Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, as well as in the frame of cooperation with foreign laboratories. The equipment is permanently supplemented and updated.
