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Sinitsyn Mikhail Alekseevich |
Birthplace:
1955, Dzerzhinsk, Russia.
Scientific degree:
Ph.D., 1987
“Development of the epitaxial MOVPE method for Al-Ga-As growth for the purposes of microwave and optoelectronics”
Current position:
Senior researcher
Work experience:
1977 - present time, Ioffe Institute.
Education:
1972 - 1977 – Lobachevsky State University of Nizhni Novgorod,
Department of Physics, “Semiconductors and dielectric physics”.
Scientific awards:
2008, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Role of the hydrogen in MOVPE process of group III nitrides”.
Research interests:
MOVPE epitaxy of the heterostructures based on the InAlGaN material system for high-efficient visible range InGaN/GaN light-emitting diodes and white light emission sources, AlInN/AlN/GaN and AlGaN/AlN/GaN high electron mobility transistors and other semiconductor devices based on them.
Patents:
RU № 2369942 «Light-emitting device based on nitride semiconductor»;
RU № 2371806 «The method for producing nitride semiconductor and nitride semiconductor device of p-type»;
Publications:
Author and co-author of more, than 50 publications in leading Russian and international scientific journals and proceedings of the All-Russian and international conferences and symposia.
Including publications indexed by Scopus 3.
h-index of Scopus 3 (november 2018).
The publication list can be found at
https://www.scopus.com/authid/detail.uri?authorId=36150190200
