Growth conditions:

• Precursors - NH₃, TMG (two source), TMA, TMI, Cp₂Mg, SiH₄, AsH₃
• Carrier gas - Ar for InGaN growth and H₂ for all other growth steps

In-situ optical reflectance monitoring in the near-normal incident using He-Ne laser and Si photodetector.

The growth process are operated by full automatic system.