Ioffe Physico-Technical InstituteLaboratory of Physics of Semiconductor Heterostructure  
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Etching

Contacts

Thinning

Cutting

Lithography


Processing Equipment

      Facilities for the rapid processing of the III-N structures are in the stage of development.

Etching system

Era-5M TCP system for chemical ion etching.

manufacturer: ESTO-Vacuum. Russia.

reactor design

Technical data:

  • Capacity: up to 6x2-inch substrates
  • Samples position: vertical
  • Charging by way of lock-chamber
  • Turbo-molecular pump (low pressure 5x10-5 Pa)
  • Separate whater heating and cooling for holder and camera.
  • In-situ optical reflectance monitoring in the near-normal incident using Laser LED and Si photodetector.
  • The etching process are operated by manually or fully automatic system.

      Etching conditions:

    • RF power: 100...800 W
    • Ion energy: 0,8...400 eV
    • Working pressure: 1...1x10-2 Pa
    • Gases: Ar, N2, O2, Cl2, BCl3, SF6 and 2 reserve channels.


Contact evaporation system

under modernization


System of thinning of samples

the stage of construction.


Laboratory cutting system

the stage of development.


Lithography facilities available in the cooperation with other Labs.


Processing of device structures is carried out with cooperation of Laboratory of Semiconductor Quantum Electronics

 

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