Laboratory of Physics of Semiconductor Heterostructures was the first laboratory in Russia, worked on the development of the MOCVD III-nitride system epitaxial technology. R&D activity of the laboratory is concentrated on fundamentals of growth, physical properties and device applications of III-N structures for LEDs, lasers and HEMTs.

Research areas:
• (InGaAl)N heterostructures grown on sapphire substrates (ultraviolet and blue-green emission range)
• (InGa)AsN heterostructures grown on sapphire substrates (yellow-green emission range)
• (InGaAl)N heterostructures grown on alternative substrates
• Investigation of structural, optical and galvanomagnetic properties of III-N materials