Web of Science® | |
---|---|
ФТИ в 200022 гг. | |
Статей | 25425 |
Цитируемость | |
суммарная | 326761 |
на статью | 12,9 |
Индекс Хирша | 169 |
G-индекс | 286 |
Scopus® | |
---|---|
ФТИ в 200022 гг. | |
Статей | 28655 |
Цитируемость | |
суммарная | 364193 |
на статью | 12,7 |
Индекс Хирша | 180 |
G-индекс | 304 |
Минтаиров Александр Миссавирович
Quantum-memory effects in the emission of quantum-dot microcavities. Phys. Rev. Lett., v.113, 9, 2014, ArtNo: #093902
http://dx.doi.org/10.1103/PhysRevLett.113.093902
Quantum Hall regime in emission spectra of single self-organized InP/GaInP quantum dots. J. Phys.: Conf. Ser., v.245, 1,
В книге (сборнике): QUANTUM DOTS 2010, 2010, ArtNo: #012041
Quantum Dots 2010, QD2010; Nottingham, UK; 26-30 April 2010
http://dx.doi.org/10.1088/1742-6596/245/1/012041
Исследование туннельного транспорта носителей в структурах с активной областью InGaN/GaN. ФТП, т.44, 12, 2010, с. 1615 - 1623
Study of tunneling transport of carriers in structures with an InGaN/GaN active region. Semiconductors, v.44, 12, 2010, p. 1567 - 1575
http://dx.doi.org/10.1134/S1063782610120067
Использование короткопериодных сверхрешеток InGaN/GaN в светодиодах синего диапазона. ФТП, т.44, 7, 2010, с. 955 - 961
The Use of Short-Period InGaN/GaN Superlattices in Blue-Region Light-Emitting Diodes. Semiconductors, v.44, 7, 2010, p. 924 - 930
http://dx.doi.org/10.1134/S106378261007016X
Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells. Semicond. Sci. Technol., v.24, 7, 2009, ArtNo: #075013
http://dx.doi.org/10.1088/0268-1242/24/7/075013
Lasing of whispering-gallery modes in asymmetric waveguide GaInP micro-disks with InP quantum dots. Phys. Lett. A, v.373, 12-13, 2009, p. 1185 - 1188
http://dx.doi.org/10.1016/j.physleta.2009.02.003
High-spatial-resolution near-field photoluminescence and imaging of whispering-gallery modes in semiconductor microdisks with embedded quantum dots. Phys. Rev. B, v.77, 19, 2008, ArtNo: #195322
http://dx.doi.org/10.1103/PhysRevB.77.195322
Investigations of InGaN/GaN and InGaN/InGaN QDs grown in a wide pressure MOCVD reactor. Int. J. Nanoscience, v.6, 5, 2007, p. 327 - 332
3rd International Conference on Materials for Advanced Technologies (ICMAT-2005)/9th International Conference on Advanced Materials (ICAM 2005) Location: Singapore, SINGAPORE Date: JUL 03-08, 2005
http://dx.doi.org/10.1142/S0219581X07004882
Near-field photoluminescence spectroscopy of InGaN quantum dots. Mater. Res. Soc. Symp. Proc., v.892, 2006, p. 843 - 848
Localization of non-equilibrium carriers in deep InGaN quantum dots and its impact on the device performance. Phys. Status Solidi C Curr. Top. Solid State Phys., v.3, 2006, p. 2043 - 2047
6th International Conference on Nitride Semiconductors (ICNS-6) Location: Bremen, GERMANY Date: AUG 28-SEP 02, 2005
http://dx.doi.org/10.1002/pssc.200565465
Near-field magneto-photoluminescence of quantum-dot-like composition fluctuations in GaAsN and InGaAsN alloys. Physica E, v.21, 2-4, 2004, p. 385 - 389
http://dx.doi.org/10.1016/j.physe.2003.11.081
Nanoindentation and near-field spectroscopy of single semiconductor quantum dots. Phys. Rev. B, v.69, 15, 2004, ArtNo: #155306
http://dx.doi.org/10.1103/PhysRevB.69.155306
Local strain effects in near-field spectra of single semiconductor quantum dots. Mater. Res. Soc. Symp. Proc., v.737, 2003, p. 59 - 64
Mechanical interaction in near-field spectroscopy of single semiconductor quantum dots. Inst. Phys. Conf., v.174,
В книге (сборнике): COMPOUND SEMICONDUCTORS 2002, 2003, p. 137 - 140
29th International Symposium on Compound Semiconductors, October 7-10, 2002, Lausanne, Switzerland
Effects of bond relaxation on the martensitic transition and optical phonons in spontaneously ordered GaInP2. Phys. Rev. B, v.67, 20, 2003, ArtNo: #205211
http://dx.doi.org/10.1103/PhysRevB.67.205211
Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys. Appl. Phys. Lett., v.83, 18, 2003, p. 3728 - 3730
http://dx.doi.org/10.1063/1.1623320
Quantum-dot-like composition fluctuations in near-field magneto-photoluminescence spectra of InGaAsN alloys. Proc. SPIE, v.5023, 1,
В книге (сборнике): 10th International Symposium on Nanostructures: Physics and Technology , 2003, p. 157 - 160
10th International Symposium on Nanostructures: Physics and Technology. June 17-21, 2002. St Petersburg, Russia
http://dx.doi.org/10.1117/12.511847
Near-field photoluminescence spectroscopy of localized states in InGaAsN alloys. Mater. Res. Soc. Symp. Proc., v.692,
В книге (сборнике): PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS SYMPOSIUM, 2002, p. 85 - 90
Progress in Semiconductor Materials for Optoelectronic Applications Symposium; Boston, Massachusetts, USA; November 26-29, 2001
Mechanical interaction in near-field spectroscopy of single semiconductor quantum dots. Mater. Res. Soc. Symp. Proc., v.722, 2002, p. 319 - 324
Near-field magnetophotoluminescence spectroscopy of composition fluctuations in InGaAsN. Phys. Rev. Lett., v.87, 27, 2001, ArtNo: #277401