Laboratory of Nonequilibrium Processes in  Semiconductors Ioffe Institute

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Research areas:

  • development of semiconductor photoelectric image converters for high-speed infrared photography;
  • theory of semiconductor optical properties and theory of physical phenomena in semiconductor technology;
  • optical, photoelectric and emission properties of semiconductors in far infrared and submillimeter regions;
  • technology of CdTe crystals, development of nuclear radiation detectors and those for X-ray tomography;
  • the physical processes in devices based on silicon MIS struc-tures with tunnel transparent dielectric;
  • structure and electronic properties of extended defects in semiconductors;
  • semiconductor tracking detectors for high luminosity accelerating facilities;
  • radiation induced defects in pure silicon, silicon detectors for precise ion spectroscopy;
  • solid state investigation under submillimeter irradiation, ESR in solid state ;
  • quantum (hopping) transport and the metal-insulator transition in disordered systems and neutron transmutation doping of semiconductors;
  • electronic, photoelectronic and optical properties of conducting polymers;
  • polymer-nanoparticle composites, polymer-inorganic complexes and organic microelectronics devices based on polymer nanostructures


    Professor Andrei Zabrodskii,

    Ioffe Physico-Technical Institute, Russian Academy of Sciences
    Politekhnicheskaya 26, St.Petersburg, 194021 Russia
    Fax: +7 (812) 297 1017
    Phone: +7 (812) 297 2245

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