4th International Workshop on Ultraviolet Materials and Devices
September 8-13, 2019, Saint Petersburg, Russia
Plenary Speakers
Michael Kneissl (Technical University of Berlin, Germany)"The prospects of AlGaN-based deep UV LED technologies"
Chris Van de Walle (University of California, Santa Barbara, USA)"Boron Nitride and Boron-Containing Nitride Alloys"
Keynote Speakers
Guillaume Cassabois (University of Montpellier, France)"Deep UV emission in hexagonal boron nitride: from bulk to monolayer"
Hideki Hirayama (RIKEN, Japan)"Problems and latest achievements in AlGaN-based deep-UV LEDs"
James Speck (University of California, Santa Barbara, USA)"Progress in beta-Ga2O3 materials and devices"
Alexey Toropov (Ioffe Institute, Russia)Tentative title "Deep-UV optical properties of ultrathin GaN/AlN quantum wells"
Invited Speakers
Masayoshi Adachi (Tohoku University, Japan)"AlN growth behavior on Ni-Al liquid solutions"
Shigefusa Chichibu (Tohoku University, Japan)"Role of Al-vacancy complexes in AlN and high AlN mole fraction AlGaN alloys"
Juergen Christen (Magdeburg University, Germany)"Advanced Nanoscale Characterization of AlGaN quantum structures using liquid-He-temperature TEM Cathodoluminescence"
Bruno Daudin (CEA-Grenoble, France)"In/Mg codoping of p-type AlN nanowires for UV-C LEDs realization"
Sven Einfeldt (Ferdinand-Braun-Institut, Germany)"Improving the reliability of UV LEDs by analyzing degradation mechanisms"
Giorgia Fugallo (Universite Paris-Saclay, France)Tentative title "Excitons in van der Waals materials: from monolayer to bulk haxagonal BN"
Akira Hirano (UV Craftory Co. Nagoya, Japan)"Detailed mechanism of high performance DUV-LEDs fabricated on the AlN underlayer with dense macrosteps"
Axel Hoffmann (Technical University of Berlin, Germany)"Optical properties of AlGaN based nanostructure for UV range"
Motoaki Iwaya (Meijo University, Japan)"High current density operation of UV-B light-emitting devices fabricated on high quality and relaxed AlGaN"
Debdeep Jena (Cornell University, USA)"Achieving Ultralow Resistance p-contacts in deep-UV LEDs"
Vera Kalygina (Tomsk State University, Russia)"Solar-blind UV detectors based on Ga2O3 films"
Ryuji Katayama (Osaka University, Japan)"Quantum Optical Application of Nitride Semiconductor: DUV Laser and Quantum Computer"
Jong Kyu Kim (Pohang University of Science & Technology, Republic of Korea)"Wafer-scale and selective-area growth of high-quality h-BN by MOVPE"
Emmanouil Kioupakis (University of Michigan, USA)"Understanding and mitigating the efficiency challenges of deep-UV light emitters with atomistic calculations"
Liverios Lymperakis (Max-Planck-Institut für Eisenforschung GmbH, Germany)"Surface rehybridization effects of B incorporation at GaN and AlN surfaces: A potential route to overcome bulk solubility limits"
Hideto Miyake (Mie University, Japan)"Preparation of high-quality AlN templates for deep UV devices"
Sergei Novikov (University of Nottingham, UK)"High-temperature MBE of hexagonal boron nitride for DUV applications"
Takeyoshi Onuma (Kogakuin University, Japan)"Observation of deep UV cathodoluminescence from rocksalt-structured MgZnO alloys"
Alfredo Segura (Universitat de València, Spain) "Pressure dependence of the electronic and polar phonon contributions to the dielectric function of hexagonal boron nitride"
Markus R. Wagner (Technical University of Berlin, Germany)"Thermal conductivity, elasticity, phonon modes, and optical band gaps of gallium oxide polymorphs"
Junxi Wang (Insitute of semiconductors, China)"Research and Development of UV LEDs in China"
Xinqiang Wang (Peking University, China)Tentative title "E-beam pumpled UV light source based on ultrathin GaN QWs"
Kenji Watanabe (Research Center for Functional Materials, NIMS, Japan)"Observation of impurity incorporated regions in hexagonal boron nitride single crystals"
Markus Weyers (Technical University of Berlin & Ferdinand Braun Institute, Germany) "Al(Ga)N/sapphire template technologies for deep UV LEDs"
Grace Xing (Cornell University, USA)"Watt’s in AlN/GaN/AlN Quantum Well HEMTs?"