4th International Workshop on Ultraviolet Materials and Devices
September 8-13, 2019, Saint Petersburg, Russia

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Tutorials International School on Physics and Technology of Nitride Compound September 8-9, 2019, St.Petersburg, Russia The International School organized by Ioffe Institute is devoted to fabrication technologies and fundamental properties of modern wide gap semiconductor materials and heterostructures on their basis, including the III-Nitride family with widely studied AlGaN system and Boron Nitride recently attracted a lot of attention and technological efforts, as well as Ga2O3-like oxides. The challenges of different technological methods like plasma-assisted molecular beam epitaxy and metalorganic chemical vapor deposition for fabrication of low-defect density III-Nitride monolayer-scale quantum wells, quantum dots, and nanowire nanostructures will be considered in detail, as well as bulk growth of III-Oxide materials. Careful theoretical examination of point defects in wide gap semiconductors and sophisticated high-resolution studies of structural and optical properties of the III-N epilayers and nanoheterostructures will be in a focus of the lectures, as well as some inherent problems related to a specific electronic structure of these materials versus Al content, polarization effects, p-doping issues etc. Optical and excitonic properties of BN monolayers and monolayer-thick 2D GaN quantum wells will be followed both theoretically and from experimental point of view as their thickness increases from one till several monolayers. Finally, new ideas and approaches in designing and fabrication of photonic devices of different kind (LEDs, lasers, high-power spontaneous emitters with electron-beam pumping, photodiodes etc. ) operating in the mid- and deep-UV ranges will be discussed. During two days the prominent international experts in the field from US, Germany, France, and Russia will deliver the 50-min lectures. All the speakers presented numerously their results as invited or plenary talks at the prestigious international and domestic conferences. All the students, PhD students, and young researchers from Saint-Petersburg Universities and Research Institutes, as well as IWUMD4 participants which are interested in the field, are very welcome! To participate in the School the on-site Registration by the Organizing Committee is necessary. Registration is open 1.5 hours prior to the lectures beginning at the Congress Hall foyer and lasts till the final lecture. There is no Registration fee for scholars. The School is supported by Russian Science Foundation (Grant # 19-72-30040).
Scientific Program of the School Sunday, September 8, Congress Hall Hotel “Holiday Inn St. Petersburg Moskovskye Vorota”, St.Petersburg, Russia
12:00 – 17:00 Registration
13:45 – 14:00 Opening remarks and greetings
Sergey Ivanov, Ioffe Institute, Russia
Organization Committee Chair, Director of Ioffe Institute
14.00 - 14.50 Plasma-Assisted Molecular Beam Epitaxy of Wide Bandgap AlGaN
Valentin Jmerik, Ioffe Institute, Russia
14.50 - 15.40 Gallium Oxide: recent advances in material technology and UV applications
Sergei Stepanov, Ioffe Institute, Russia
16.10 - 17.00 MOVPE of III-N Heterostructures: Effect of Reactor Geometry on the Epitaxial Process
Wsevolod Lundin, Ioffe Institute, Russia
17.00 - 17.50 Novel designs of DUV LEDs: ideas and experiments
Debdeep Jena, Cornell University, USA
Monday, September 9, Congress Hall Hotel “Holiday Inn St. Petersburg Moskovskye Vorota”, St.Petersburg, Russia
09.00 – 16.00 Registration
09:50 – 10:40 Characterization of Point Defects in Semiconductors
Chris G. Van de Walle, University of California, Santa Barbara, USA
11.10 - 12.00 Optoelectronics properties of hexagonal boron nitride
Guillaume Cassabois, University Montpellier II, France
12.00 - 12.50 High-resolution structural and optical studies of AlGaN nanostructures
Jurgen Christen, University of Magdeburg, Germany
14.00 - 14.50 2D confined excitons for room-temperature UV light emission
Alexey Toropov, Ioffe Institute, Russia
14.50 - 15.40 AlGaN materials for UV emission and some of their limitations
Jean-Yves Duboz, Université Côte d’Azur, CRHEA-CNRS, France
16.10 - 17.00 Molecular beam epitaxy of III-nitride materials: from layers to quantum dots and nanowires by
playing with growth conditions
Bruno Daudin, Université Grenoble Alpes & CEA-CNRS, France
17.00 - 17.15 Closing Remarks