Ioffe Physico-Technical InstituteLaboratory of Physics of Semiconductor Heterostructure  
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Quantum dots

Design and growth

InGaN Insertion

HRTEM Image

InGaN optimization

Temperature dependence of PL

Spectra of Blue LED with QDs active region


Quantum Dots Technology

PROBLEMS

REASONS

QUANTUM DOT GOALS


Decreasing of the emission efficiency due to strong effect of piezoelectric fields

Spatial separation of electrons and holes due to piezoelectric fields

Formation nanoscale QDs with local increase In content


Degradation of optical properties with shift of emission in green optical range Necessity to increase In content Local areas with large In content
Low average In content


Reduction of emission efficiency with active region temperature increase

Reduction of LED operating lifetime with current increase
Thermal evaporation of carriers
Dislocation formation

Suppression in-plane transport


Emitting wavelength shift with current density and temperature increase Shift of Fermi level

Atom-like levels

 

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