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LED Technology
PROBLEMS
REASONS
DESIGN GOALS
LED overheating due to ohmic dissipation
Due to the device geometry main part of serial resistance originates from n-side of the structure
n-AlGaN/GaN SLs
Formation series of 2D channels to increase in-plane conductivity
Heat removing from LED under high current density operation
Poor current spreading within the p-type layers
Flip chip mounting
Lumileds Lighting Design
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MOCVD epitaxy
Characterization
Processing
MOCVD Growth
LED Technology
LD Technology
VCSEL
Transistors
Photodetectors
Alternative materials
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