Ioffe Physico-Technical InstituteLaboratory of Physics of Semiconductor Heterostructure  
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DBR Structure

BDR Electrical Properties

Cavity-Enhanced LED

RT photopumped VCSEL

VCSEL Technology

Electrical Properties of Si-doped
Strain-Compensated GaN-AlGaN DBR


  77K RT
n, cm-3 2x1018 2x1018
µ, cm2V-1s-1 900 570
σ, Ω-1cm-1 290 250

  • AlGaN strain-compensating buffer
  • High in-plane conductivity

modeling of the current path in VCSEL and RCLED

  • Ohmic I-V characteristics, Ω50W resistance
  • Tolerates up to 10-12 kA/cm2 in a DC mode > 100 kA/cm2 in a pulsed mode

Metal contact on top of N-DBR

 

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