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Калевич Владимир Константинович
The sign of electron g-factor in GaAs1-xNx measured by using the Hanle effect. Semicond. Sci. Technol., v.23, 11, 2008, ArtNo: #114008
http://dx.doi.org/10.1088/0268-1242/23/11/114008
Chapter 11. Spin dynamics in dilute nitride. Springer Ser. Math. Sci., v.105,
В книге (сборнике): Dilute III-V Nitride Semiconductors and Material Systems, 2008, p. 283 - 299
http://dx.doi.org/10.1007/978-3-540-74529-7_11
Chapter 12. Dynamic nuclear polarization and nuclear fields. Springer Series in Solid-State Sciences, v.157,
В книге (сборнике): Spin Physics in Semiconductors , 2008, p. 309 - 346
http://dx.doi.org/10.1007/978-3-540-78820-1_11
Spin Dynamics Controlled by Spin-Dependent Recombination in GaAsN alloys at Room Temperature. AIP Conf. Proc., v.893, 1,
В книге (сборнике): Physics of Semiconductors, Pts A and B, 2007, p. 1309 - 1310
28th International Conference on the Physics of Semiconductors (ICPS-28) Location: Vienna, AUSTRIA Date: JUL 24-28, 2006
http://dx.doi.org/10.1063/1.2730383
Spin-dependent electron dynamics and recombination in GaAs1-xNx alloys at room temperature. Письма ЖЭТФ, т.85, 3, 2007, p. 208 - 212
Spin-dependent electron dynamics and recombination in GaAs1-xNx alloys at room temperature. Jetp Lett., v.85, 3, 2007, p. 174 - 178
http://dx.doi.org/10.1134/S0021364007030095
Electron spin dynamics in GaAsN and InGaAsN structures. Phys. Status Solidi A-Appl. Mat., v.204, 1, 2007, p. 208 - 220
http://dx.doi.org/10.1002/pssa.200673009
Direct observation of the electron spin relaxation induced by nuclei in quantum dots. Proc. SPIE, v.6118, 2006, ArtNo: #61180Q
http://dx.doi.org/10.1117/12.641399
Spin relaxation of positive trions in InAs/GaAs quantum dots: the role of hyperfine interaction. Phys. Status Solidi B-Basic Solid State Phys., v.243, 15, 2006, p. 3917 - 3921
http://dx.doi.org/10.1002/pssb.200671528
Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots. Phys. Status Solidi B-Basic Solid State Phys., v.243, 10, 2006, p. 2266 - 2273
http://dx.doi.org/10.1002/pssb.200668001
Spin dynamics of electrons and holes in p-doped InAs/GaAs quantum dots. Braz. J. Phys., v.36, 2A, 2006, p. 482 - 487
http://dx.doi.org/10.1590/S0103-97332006000300067
Negative circular polarization as a general property of n-doped self-assembled InAs/GaAs quantum dots under nonresonant optical excitation. Phys. Rev. B, v.73, 23, 2006, ArtNo: #235302
http://dx.doi.org/10.1103/PhysRevB.73.235302
Spin dynamics in dilute nitride semiconductors at room temperature. Appl. Phys. Lett., v.87, 25, 2005, ArtNo: #252115
http://dx.doi.org/10.1063/1.2150252
Спин-зависимая рекомбинация в твердых растворах GaAsN. Письма ЖЭТФ, т.82, 7, 2005, с. 509 - 512
Spin-dependent recombination in GaAsN solid solutions. Jetp Lett., v.82, 7, 2005, p. 455 - 458
http://dx.doi.org/10.1134/1.2142877
Optical spin polarization in double charged InAs self-assembled quantum dots. Phys. Status Solidi A-Appl. Res., v.202, 3, 2005, p. 387 - 391
http://dx.doi.org/10.1002/pssa.200460324
Direct observation of the electron spin relaxation induced by nuclei in quantum dots. Phys. Rev. Lett., v.94, 11, 2005, ArtNo: #116601
http://dx.doi.org/10.1103/PhysRevLett.94.116601
Spin dynamics in p-doped InAs/GaAs quantum dots. Phys. Status Solidi B-Basic Solid State Phys., v.242, 6, 2005, p. 1233 - 1236
http://dx.doi.org/10.1002/pssb.200460778
Optical spin polarization and exchange interaction in doubly charged InAs self-assembled quantum dots. Phys. Rev. B, v.72, 4, 2005, ArtNo: #045325
http://dx.doi.org/10.1103/PhysRevB.72.045325
Determination of strain-induced valence-band splitting in GaAsN thin films from circularly polarized photoluminescence. J. Appl. Phys., v.98, 1,
В книге (сборнике): Novel In-Plane Semiconductor Lasers IV, 2005, ArtNo: #013539
http://dx.doi.org/10.1063/1.1949718
Optical spin polarization of holes in negatively charged InAs/GaAs self-assembled quantum dots. Physica E, v.21, 2-4, 2004, p. 1018 - 1021
http://dx.doi.org/10.1016/j.physe.2003.11.162
Long-lived spin polarisation in the charged InP quantum dots. Physica E, v.17, 1-4, 2003, p. 361 - 364
International Conference on Superlattices, Nano-structures and Nano-devices (ICSNN 2002), Toulouse, France, 22 - 26 July 2002
http://dx.doi.org/10.1016/S1386-9477(02)00811-1