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Власенко Леонид Сергеевич
Детектирование парамагнитных центров рекомбинации на поверхности пластин кремния. ФТП, т.58, 5, 2024, с. 256 - 262
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Detection of paramagnetic recombination centers on the surface of silicon wafers. Semiconductors, v.58, 5, 2024, p. 243 - 248
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Идентификация парамагнитных центров спин-зависимой рекомбинации на поверхности пластин кремния. Письма ЖТФ, т.50, 9, 2024, с. 3 - 5
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Identification of paramagnetic spin dependent recombination centers on surface of silicon wafers. Tech. Phys. Lett., v.50, 5, 2024, p. 1 - 3
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Series of Near-IR-Absorbing Transition Metal Complexes with Redox Active Ligands. Molecules, v.25, 11, 2020, ArtNo: #2531
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Dynamic nuclear polarization and ESR hole burning in As doped silicon. Phys. Chem. Chem. Phys., v.22, 18, 2020, p. 10227 - 10237
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Spin excitations in laser-molecular-beam epitaxy-grown nanosized YIG films: towards low relaxation and desirable magnetization profile. J. Phys. D-Appl. Phys., v.53, 26, 2020, ArtNo: #265003
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NIR-absorbing transition metal complexes with redox-active ligands. Inorg. Chem. Commun., v.112, 2020, ArtNo: #107711
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Electron spin resonance identification di-carbon-related centers in irradiated silicon. J. Appl. Phys., v.123, 16, 2018, ArtNo: #161592
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Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers. J. Appl. Phys., v.123, 16, 2018, ArtNo: #161582
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Dynamic Polarization and Relaxation of As-75 Nuclei in Silicon at High Magnetic Field and Low Temperature. Appl. Magn. Reson., v.48, 5, 2017, p. 473 - 483
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Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field. Nanotechnology, v.27, 49, 2016, ArtNo: #494001
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Effects of Spin-Dependent Recombination and EPR Spectroscopy of the Excited Triplet States of Point Defects in Silicon. Appl. Magn. Reson., v.47, 7, SI, 2016, p. 813 - 822
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Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon. J. Appl. Phys., v.118, 24, 2015, ArtNo: #245703
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Microscopic control of Si-29 nuclear spins near phosphorus donors in silicon. Phys. Rev. B, v.92, 12, 2015, ArtNo: #121202
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Submillisecond hyperpolarization of nuclear spins in silicon. Phys. Rev. Lett., v.114, 11, 2015, ArtNo: #117602
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Efficient dynamic nuclear polarization of phosphorus in silicon in strong magnetic fields and at low temperatures. Phys. Rev. B, v.90, 21, 2014, ArtNo: #214401
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Spin-dependent recombination at arsenic donors in ion-implanted silicon. Appl. Phys. Lett., v.105, 11, 2014, ArtNo: #112111
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Spin-dependent recombination involving oxygen-vacancy complexes in silicon. Phys. Rev. B, v.89, 19, 2014, ArtNo: #195207
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Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces. Appl. Phys. Lett., v.103, 11, 2013, ArtNo: #111601
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Optical and dynamic nuclear polarization of Si-29 nuclei via photoexcited triplet states of oxygen-vacancy complexes in isotopically controlled silicon. Phys. Rev. B, v.87, 7, 2013, ArtNo: #075201
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Rabi oscillation and electron-spin-echo envelope modulation of the photoexcited triplet spin system in silicon. Phys. Rev. B, v.86, 11, 2012, ArtNo: #115206
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