21. Mortemousque,PA; Sekiguchi,T; Culan,C; Vlasenko,MP; Elliman,RG; Vlasenko,LS; Itoh,KM
Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields. Appl. Phys. Lett., v.101, 8, 2012, ArtNo: #082409
http://dx.doi.org/10.1063/1.4747723

22. Matsuoka,T; Vlasenko,LS; Vlasenko,MP; Sekiguchi,T; Itoh,KM
Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface. Appl. Phys. Lett., v.100, 15, 2012, ArtNo: #152107
http://dx.doi.org/10.1063/1.3702785

23. Akhtar,W; Filidou,V; Sekiguchi,T; Kawakami,E; Itahashi,T; Vlasenko,L; Morton,JJ; Itoh,KM
Coherent storage of photoexcited triplet states using Si29 nuclear spins in silicon. Phys. Rev. Lett., v.108, 9, 2012, ArtNo: #097601
http://dx.doi.org/10.1103/PhysRevLett.108.097601

24. Vlasenko,LS
Chapter 6. Paramagnetic centers in ZnO.
В книге (сборнике): Zinc Oxide the Future Material for Electronics: A Comprehensive Review on ZnO Physics and Defects, 2011, p. 141 - 177

25. Ishikawa,T; Koga,K; Itahashi,T; Itoh,KM; Vlasenko,LS
Optical properties of triplet states of excitons bound to interstitial-carbon interstitial-oxygen defects in silicon. Phys. Rev. B, v.84, 11, 2011, ArtNo: #115204
http://dx.doi.org/10.1103/PhysRevB.84.115204

26. Akhtar,W; Morishita,H; Sawano,K; Shiraki,Y; Vlasenko,LS; Itoh,KM
Electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon. Phys. Rev. B, v.84, 4, 2011, ArtNo: #045204
http://dx.doi.org/10.1103/PhysRevB.84.045204

27. Morishita,H; Abe,E; Akhtar,W; Vlasenko,LS; Fujimoto,A; Sawano,K; Shiraki,Y; Dreher,L; Riemann,H; Abrosimov,NV; Becker,P; Pohl,H-; Thewalt,ML; Brandt,MS; Itoh,KM
Linewidth of low-field electrically detected magnetic resonance of phosphorus in isotopically controlled silicon. Appl. Phys. Express, v.4, 2, 2011, ArtNo: #21302
http://dx.doi.org/10.1143/APEX.4.021302

28. Rahman,MR; Valasenko,MP; Vlasenko,LS; Haller,EE; Itoh,KM
Splitting of electron paramagnetic resonance lines of lithium-oxygen centers in isotopically enriched Si-28 single crystals. Solid State Commun., v.150, 45-46, 2010, p. 2275 - 2277
http://dx.doi.org/10.1016/j.ssc.2010.09.026

29. Rahman,MR; Itahashi,T; Vlasenko,MP; Vlasenko,LS; Haller,EE; Itoh,KM
Dynamic Nuclear Polarization of Si-29 Nuclei Induced by Li and Li-O Centers in Silicon. Jpn. J. Appl. Phys., v.49, 10, 2010, ArtNo: #103001
http://dx.doi.org/10.1143/JJAP.49.103001

30. Laiho,R; Ojala,I; Vlasenko,L
Percolation of ferromagnetism in ZnO codoped with Fe and Mg. J. Appl. Phys., v.108, 5, 2010, ArtNo: #053915
http://dx.doi.org/10.1063/1.3475724

31. Vlasenko,LS
Magnetic Resonance Studies of Intrinsic Defects in ZnO: Oxygen Vacancy. Appl. Magn. Reson., v.39, 1-2, 2010, p. 103 - 111
http://dx.doi.org/10.1007/s00723-010-0140-1

32. Dagnelund,D; Vorona,IP; Vlasenko,LS; Wang,XJ; Utsumi,A; Furukawa,Y; Wakahara,A; Yonezu,H; Buyanova,IA; Chen,WM
Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction. Phys. Rev. B, v.81, 11, 2010, ArtNo: #115334
http://dx.doi.org/10.1103/PhysRevB.81.115334

33. Vlasenko,LS
Point defects in ZnO: Electron paramagnetic resonance study. Physica B, v.404, 23-24, 2009, p. 4774 - 4778
http://dx.doi.org/10.1016/j.physb.2009.08.149

34. Itahashi,T; Hayashi,H; Itoh,KM; Poloskin,DS; Vlasenko,LS; Vlasenko,MP
Dynamic nuclear polarization of Si-29 via spin S=1 centers in isotopically controlled silicon. Physica B, v.404, 23-24, 2009, p. 5054 - 5056
http://dx.doi.org/10.1016/j.physb.2009.08.241

35. Akhtar,W; Morishita,H; Vlasenko,LS; Poloskin,DS; Itoh,KM
Electrically detected magnetic resonance of phosphorous due to spin dependent recombination with triplet centers in gamma-irradiated silicon. Physica B, v.404, 23-24, 2009, p. 4583 - 4585
http://dx.doi.org/10.1016/j.physb.2009.08.116

36. Laiho,R; Stepanov,YP; Vlasenko,MP; Vlasenko,LS
Persistent photoconductivity of ZnO. Physica B, v.404, 23-24, 2009, p. 4787 - 4790
http://dx.doi.org/10.1016/j.physb.2009.08.176

37. Ishikawa,T; Koga,K; Itahashi,T; Vlasenko,LS; Itoh,KM
Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon. Physica B, v.404, 23-24, 2009, p. 4552 - 4554
http://dx.doi.org/10.1016/j.physb.2009.08.316

38. Rahman,MR; Vlasenko,LS; Haller,EE; Itoh,KM
Electron paramagnetic resonance and dynamic nuclear polarization of 29Si nuclei in lithium-doped silicon. Physica B, v.404, 23-24, 2009, p. 5060 - 5062
http://dx.doi.org/10.1016/j.physb.2009.08.224

39. Morishita,H; Vlasenko,LS; Tanaka,H; Semba,K; Sawano,K; Shiraki,Y; Eto,M; Itoh,KM
Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon. Phys. Rev. B, v.80, 20, 2009, ArtNo: #205206
http://dx.doi.org/10.1103/PhysRevB.80.205206

40. Wang,XJ; Vlasenko,LS; Pearton,SJ; Chen,WM; Buyanova,IA
Oxygen and zinc vacancies in as-grown ZnO single crystals. J. Phys. D-Appl. Phys., v.42, 17, 2009, ArtNo: #175411
http://dx.doi.org/10.1088/0022-3727/42/17/175411