41. Hayashi,H; Itahashi,T; Itoh,KM; Vlasenko,LS; Vlasenko,MP
Dynamic nuclear polarization of Si-29 nuclei in isotopically controlled phosphorus doped silicon. Phys. Rev. B, v.80, 4, 2009, ArtNo: #045201
http://dx.doi.org/10.1103/PhysRevB.80.045201

42. Laiho,R; Poloskin,DS; Stepanov,YuP; Vlasenko,MP; Vlasenko,LS; Zakhvalinskii,VS
Persistent photoconductivity and electron paramagnetic resonance in zinc oxide ceramics. J. Appl. Phys., v.106, 1, 2009, ArtNo: #013712
http://dx.doi.org/10.1063/1.3159646

43. Hayashi,H; Itoh,KM; Vlasenko,LS
Nuclear magnetic resonance linewidth and spin diffusion in Si-29 isotopically controlled silicon. Phys. Rev. B, v.78, 15, 2008, ArtNo: #153201
http://dx.doi.org/10.1103/PhysRevB.78.153201

44. Laiho,R; Vlasenko,LS; Vlasenko,MP
Optical detection of magnetic resonance and electron paramagnetic resonance study of the oxygen vacancy and lead donors in ZnO. J. Appl. Phys., v.103, 12, 2008, ArtNo: #123709
http://dx.doi.org/10.1063/1.2942403

45. Huhtinen,H; Laiho,R; Vlasenko,LS; Vlasenko,MP; Zakhvalinskii,V; Leiro,J; Mattila,S; Sutara,F; Vondracek,M
Effect of illumination on magnetization and microwave absorption of La1-xCaxMnO3 (x<0.2) films. J. Magn. Magn. Mater., v.320, 11, 2008, p. 1747 - 1752
http://dx.doi.org/10.1016/j.jmmm.2008.01.038

46. Hayashi,H; Ko,W; Itahashi,T; Sagara,A; Itoh,KM; Vlasenko,LS; Vlasenko,MP
Dynamic nuclear polarization of 29Si nuclei in the isotope enriched n-type silicon. Phys. Status Solidi C Curr. Top. Solid State Phys., v.3, 12, 2006, p. 4388 - 4391
ce on Physics and Applications of Spin-Related Phenomena in Semiconductors (PASP-IV); Sendai, Japan; August 15-18, 2006
http://dx.doi.org/10.1002/pssc.200672823

47. Vlasenko,LS; Vlasenko,MP; Poloskin,DS; Laiho,R; Hayashi,H; Itahashi,T; Sagara,A; Itoh,KM
Electron paramagnetic resonance and dynamic nuclear polarization via the photoexcited triplet states of radiation defects in natural and Si-29 isotope enriched silicon. Phys. Status Solidi C Curr. Top. Solid State Phys., v.3, 12, 2006, p. 4376 - 4379
4th International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors (PASP-IV) Location: Sendai, JAPAN Date: AUG 15-18, 2006
http://dx.doi.org/10.1002/pssc.200672809

48. Vlasenko,LS; Watkins,GD
Intrinsic defects in ZnO: A study using optical detection of electron paramagnetic resonance. Physica B, v.376-377, 1, 2006, p. 677 - 681
23rd International Conference on Defects in Semiconductors
http://dx.doi.org/10.1016/j.physb.2005.12.170

49. Vlasenko,LS; Watkins,GD
Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K. Phys. Rev. B, v.72, 3, 2005, ArtNo: #035203
http://dx.doi.org/10.1103/PhysRevB.72.035203

50. Vlasenko,LS; Watkins,GD; Helbig,R
Origin of the 6885-cm(-1) luminescence lines in ZnO: Vanadium versus copper. Phys. Rev. B, v.71, 11, 2005, ArtNo: #115205
http://dx.doi.org/10.1103/PhysRevB.71.115205

51. Vlasenko,LS; Watkins,GD
Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO. Phys. Rev. B, v.71, 12, 2005, ArtNo: #125210
http://dx.doi.org/10.1103/PhysRevB.71.125210

52. Chow,KH; Vlasenko,LS; Johannesen,P; Bozdog,C; Watkins,GD; Usui,A; Sunakawa,H; Sasaoka,C; Mizuta,M
Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance. Phys. Rev. B, v.69, 4, 2004, ArtNo: #045207
http://dx.doi.org/10.1103/PhysRevB.69.045207

53. Johannesen,P; Zakrzewski,A; Vlasenko,LS; Watkins,GD; Usui,A; Sunakawa,H; Mizuta,M
Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance. Phys. Rev. B, v.69, 4, 2004, ArtNo: #045208
http://dx.doi.org/10.1103/PhysRevB.69.045208

54. Eremin,V; Poloskin,DS; Verbitskaya,E; Vlasenko,MP; Vlasenko,LS; Laiho,R; Niinikoski,TO
Spin-dependent recombination electron paramagnetic resonance spectroscopy of defects in irradiated silicon detectors. J. Appl. Phys., v.93, 12, 2003, p. 9659 - 9664
http://dx.doi.org/10.1063/1.1576488

55. Vlasenko,LS; Bozdog,C; Watkins,GD; Shahedipour,F; Wessels,BW
Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN. Phys. Rev. B, v.65, 20, 2002, ArtNo: #205202
http://dx.doi.org/10.1103/PhysRevB.65.205202

56. Laiho,R; Vlasenko,MP; Vlasenko,LS
New low symmetry configuration of the two carbon-interstitial silicon complex in irradiated silicon. Solid State Commun., v.124, 10-11, 2002, p. 403 - 406
http://dx.doi.org/10.1016/S0038-1098(02)00574-4

57. Laiho,R; Lahderanta,E; Vlasenko,LS; Vlasenko,MP; Zakhvalinskii,VS
Conductivity of La1-xCaxMnO3 under magnetic resonance of Mn ions. ФТТ, т.43, 3, 2001, p. 471 - 473

58. Власенко,ЛС; Гореленок,АТ; Емцев,ВВ; Каманин,АВ; Полоскин,ДС; Шмидт,НМ
Поверхностное геттерирование фоновых примесей и дефектов в пластинах GaAs. ФТП, т.35, 2, 2001, с. 184 - 187

59. Власенко,ЛС; Гореленок,АТ; Емцев,ВВ; Каманин,АВ; Кохановский,СИ; Полоскин,ДС; Шмидт,НМ
Диагностика высокоомных пластин GaAs методом микроволновой фотопроводимости. Письма ЖТФ, т.27, 1, 2001, с. 19 - 23

60. Huhtinen,H; Laiho,R; Lahderanta,E; Paturi,P; Stepanov,YP; Vlasenko,LS
Field-modulated microwave absorption in thin YBaCuO films. Physica B, v.284, Part 1, 2000, p. 949 - 950
http://dx.doi.org/10.1016/S0921-4526(99)02265-6