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ФТИ в 200022 гг. | |
Статей | 28655 |
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Малышев Андрей Викторович
DNA-based tunable THz oscillator. J. Lumines., v.129, 12, 2009, p. 1779 - 1781
http://dx.doi.org/10.1016/j.jlumin.2009.01.023
Effects of the environment on the electric conductivity of double-stranded DNA molecules. J. Phys.: Condens. Matter, v.21, 33, 2009, ArtNo: #335105
http://dx.doi.org/10.1088/0953-8984/21/33/335105
Engineering molecular aggregate spectra. Phys. Status Solidi C Curr. Top. Solid State Phys., v.6, 1, 2009, p. 224 - 227
http://dx.doi.org/10.1002/pssc.200879867
Probing quantum-mechanical level repulsion in disordered systems by means of time-resolved selectively excited resonance fluorescence. Phys. Rev. Lett., v.98, 8, 2007, ArtNo: #087401
http://dx.doi.org/10.1103/PhysRevLett.98.087401
DNA double helices for single molecule electronics. Phys. Rev. Lett., v.98, 9, 2007, ArtNo: #096801
http://dx.doi.org/10.1103/PhysRevLett.98.096801
Quantum electron splitter based on two quantum dots attached to leads. Phys. Rev. B, v.74, 3, 2006, ArtNo: #033308
http://dx.doi.org/10.1103/PhysRevB.74.033308
Localization properties of a one-dimensional tight-binding model with nonrandom long-range intersite interactions. Phys. Rev. B, v.71, 17, 2005, p. 1 - 6
http://dx.doi.org/10.1103/PhysRevB.71.174203
Universal parameter at the Anderson transition on a one-dimensional lattice with non-random long-range coupling. J. Lumines., v.108, 1-4, 2004, p. 269 - 272
http://dx.doi.org/10.1016/j.jlumin.2004.01.057
Critical Hamiltonians on one-dimensional disordered lattices. Phys. Status Solidi B-Basic Res., v.241, 10, 2004, p. 2419 - 2423
http://dx.doi.org/10.1002/pssb.200304868
Monitoring the localization-delocalization transition within a one-dimensional model with nonrandom long-range interaction. Phys. Rev. B, v.70, 17, 2004, ArtNo: #172202
http://dx.doi.org/10.1103/PhysRevB.70.172202
Low-temperature quenching of one-dimensional localized frenkel excitons. Chem. Phys. Lett., v.371, 3-4, 2003, p. 417 - 425
http://dx.doi.org/10.1016/S0009-2614(03)00206-9
On the low-temperature diffusion of localized Frenkel excitons in linear molecular aggregates. J. Phys. Chem. B, v.107, 18, 2003, p. 4418 - 4425
Population of higher-energy levels in LiY(1-x)ErxF4(x=0.003/1) crystals under CW IR laser-diode pumping. Proc. SPIE, v.4766, 1,
В книге (сборнике): XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, 2002, p. 261 - 271
http://dx.doi.org/10.1117/12.475342
UP-конверсия и заселение возбужденных уровней иона эрбия в кристаллах LiY1-xErxF4 (x=0.003-1) при непрерывной накачке облучением InGaAs-лазерных диодов. Оптика спектроск., т.92, 1, 2002, с. 73 - 88
Up-conversion and population of excited erbium levels in LiY1-xErxF4 (x=0.003-1) crystals under CW InGaAs laser-diode pumping. Opt. Spectrosc., v.92, 1, 2002, p. 67 - 82
http://dx.doi.org/10.1134/1.1446584
Concentration and power dependencies of level population of 2.8-mu m laser transition in YLF:Er crystals under cw laser diode pumping. Proc. SPIE, v.4350,
В книге (сборнике): Laser Optics 2000: Solid State Lasers, 2001, p. 75 - 80
Laser Optics 2000: Semiconductor Lasers and Optical Communication
Level and wave function statistics of a localized 1D Frenkel exciton at the bottom of the band. J. Lumines., v.94-95, 2001, p. 369 - 372
http://dx.doi.org/10.1016/S0022-2313(01)00303-9
Population of lasing erbium levels in YLF : Er3+ crystals under upconversion cw LD pumping. J. Lumines., v.94, 0, 2001, p. 317 - 320
http://dx.doi.org/10.1016/S0022-2313(01)00393-3
Statistics of low energy levels of a one-dimensional weakly localized Frenkel exciton: A numerical study. Phys. Rev. B, v.63, 19, 2001, p. #195111 - 195111
http://dx.doi.org/10.1103/physrevb.63.195111
Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities. Phys. Rev. B, v.63, 20, 2001, ArtNo: #201204
http://dx.doi.org/10.1103/PhysRevB.63.201204
К теории анизотропии магнитного момента мелких акцепторных центров в алмазоподобных полупроводниках. ФТТ, т.42, 1, 2000, с. 29 - 36
To the theory of magnetic-moment anisotropy of shallow acceptor centers in diamond-like semiconductors. Phys. Solid State, v.42, 1, 2000, p. 29 - 36
http://dx.doi.org/10.1134/1.1131163