Invited talks

A partial list of invited speakers who have confirmed their participation so far is given below. The tentative titles of invited talks are also announced.

Joel W Ager	Lawrence Berkeley National Laboratory, Berkeley, CA, USA
Dealing with defects in indium nitride
Hartmut Bracht	University of Muenster, Muenster, Germany
Scientific and technological issues of atomic transport in silicon-germanium alloys
Leonard Brillson	205 Dreese Lab, Columbus, OH, USA
Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation
Laurie Calvet	University of Paris Sud XI, Paris, France
Transport spectroscopy of single defects in silicon
Alexandra Carvalho	EPFL, Lausanne, Switzerland
Progress towards understanding self-interstitial defects in Ge
Jose Coutinho	Aveiro University, Aveiro, Portugal
Surface segregation of dopants in nano-crystalline silicon: density-functional studies
Gordon Davies	King's College, London, UK
Strange lifetimes of the vibrations of interstitial oxygen in SiGe alloys
Leszek Dobaczewski	Institute of Physics, Warsaw, Poland
Energy state distributions at oxide-semiconductor interfaces investigated by Laplace DLTS
Stefan Estreicher	Texas Tech University, Lubbock, TX, USA
Non-equilibrium molecular dynamics for impurities in semiconductors: vibrational lifetimes and thermal conductivities
Minoru Fujii	Kobe University, Kobe, Japan
Impurity doping in Si nanowires and nanocrystals
Maria Ganchenkova	Helsinki University of Technology, Espoo, Finland
Simulations of defects and defect microstucture evolution in GaN-based alloys
Wolfgang Gehlhoff	Technical University, Berlin, Germany
EPR identification of intrinsic and transition metal-related defects in II-IV-V2 compounds
Kohei Itoh	Keio University, Yokohama, Japan
Quantum coherence and manipulation of phosphorus electron and nuclear spin states in silicon
Anderson Janotti	University of California, Santa Barbara, CA, USA
Oxygen vacancies in oxides
Tsunenobu Kimoto	Kyoto University, Kyoto, Japan
Point and extended defects in SiC and their impact on modern technological processes
Edward Lavrov	Technical University of Dresden, Dresden, Germany
Hydrogen in ZnO
Bo Monemar	Linköping University, Linköping, Sweden
Optical properties of Mg-doped GaN
Kai Nordlund	University of Helsinki, Helsinki, Finland
On the threshold energy of atomic displacement in Si
Michael Stavola	Lehigh University, Lehigh, PA, USA
Hydrogen in multi-crystalline silicon solar cells
Satoru Suzuki	NTT Basic Research Laboratories, Kanagava, Japan
Defect engineering in single-walled carbon nanotubes
Leonid Vlasenko	Ioffe Institute, St Petersburg, Russia
Point defects in ZnO: Electron paramagnetic resonance study