General information
Announcement updated
Organizers & Sponsors
Location and Date updated
Welcome to St Petersburg
Accommodation updated
Transportation updated
Registration updated
Payments new
Format updated
Tutorial Day updated
Invited Talks updated
Programme updated
Abstract Submission updated
Late Abstract Submission new
Proceedings updated
Important Dates updated
Corbett Prizes updated
Social Programme updated
Welcome Party new
Passport and Visa updated
Final Report updated
Officials
Contact
Nanotechweb
   Print version
You are here: www.ioffe.ru/ICDS-25 » Programme

Programme

Monday, July 20, 2009

08:30–09:00 Opening session
09:00–10:30 Great Hall
Plenary session
09:00–10:30 Applied and basic aspects of defect studies
10:30–10:50 Coffee break
10:50–12:10 Great Hall Ioffe Hall
10:50–12:05 Defects in InN 10:50–12:10 Defects in diamond
12:10–13:30 Lunch
13:30–15:45
13:30–15:45 Defects in compound semiconductors-I 13:30–15:45 Defects in SiC
15:45–16:05 Coffee break
16:05–18:00 Poster Session I (topics 1, 2)
18:15 Bus

Tuesday, July 21, 2009

08:30–10:25 Great Hall Ioffe Hall
08:30–10:25 Defects in oxides-I 08:30–10:25 Defects in nanostructures-I
10:25–10:45 Coffee break
10:45–12:00
10:45–12:00 Defects in oxides-II 10:45–12:00 Defects in nanostructures-II
12:00–13:20 Lunch
13:20–15:15
13:20–15:15 Defects in compound semiconductors-II 13:20–15:10 Defects in nanostructures-III
15:15–15:35 Coffee break
15:35–18:00 Poster Session II (topics 1, 2, 8, 9)
18:15 Bus
19:00–22:00 IAC Meeting

Wednesday, July 22, 2009

08:30–10:00 Great Hall Ioffe Hall
08:30–10:00 Defects in compound semiconductors-III 08:30–10:00 Defects at interfaces
10:00–10:20 Coffee break
10:20–12:40
10:20–12:40 Defect engineering 10:20–12:35 Defects in silicon-I
12:40–14:00 Lunch
14:30 Bus
14:30–17:00 Excursions

Thursday, July 23, 2009

08:30–10:20 Great Hall Ioffe Hall
08:30–10:20 Hydrogen in semiconductors-I 08:30–10:20 Defects in silicon-II
10:20–10:40 Coffee break
10:40–12:00
10:40–12:00 Hydrogen in semiconductors-II 10:40–12:00 Defects in isotopically controlled silicon
12:00–13:20 Lunch
13:20–15:20
13:20–15:20 Defects in low dimensional structures 13:20–15:15 Defects in germanium
15:20–15:40 Coffee break
15:40–17:10
15:40–17:00 Defects in organic semiconductors 15:40–17:10 Transport phenomena in Si, Ge, and Si-Ge alloys
17:10–18:10 Poster Session III (topics 2–7, 10)
18:25 Bus
19:00–22:00 Banquet

Friday, July 24, 2009

09:00–09:45 Great Hall
Plenary session
09:00–09:45 Spintronics
09:45–10:10 Coffee break
10:10–12:25 Great Hall Ioffe Hall
10:10–12:25 Defects in SiGe 10:10–10:45 Defects in compound semiconductors-IV
10:45–12:25 Magnetic impurities
12:25–12:50 Coffee break and snack
12:50–13:00 Closing Session
13:15 Bus
(c) 2007-2009, Ioffe Institute, ICDS-25